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| 1N5550US thru 1N5554US VOIDLESS HERMITICALLY SEALED SURFACE MOUNT STANDARD RECOVERY GLASS RECTIFIERS SCOTTSDALE DIVISION DESCRIPTION This "standard recovery" surface mount rectifier diode series is military qualified to MIL-PRF-19500/420 and is ideal for high-reliability applications where a failure cannot be tolerated. These industry-recognized 5.0 Amp rated rectifiers for working peak reverse voltages from 200 to 1000 volts are hermetically sealed with voidless-glass construction using an internal "Category I" metallurgical bond. These devices are also available in axial-leaded packages for thru-hole mounting (see separate data sheet for 1N5550 thru 1N5554). Microsemi also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speeds. IMPORTANT: For the most current data, consult MICROSEMI's website: http://www.microsemi.com APPEARANCE WWW .Microsemi .C OM Package "E" or D-5B FEATURES * Surface mount package series equivalent to the JEDEC registered 1N5550 to 1N5554 series * Voidless hermetically sealed glass package * Extremely robust construction * Triple-layer passivation * Internal "Category I" Metallurgical bonds * JAN, JANTX, JANTXV, and JANS available per MILPRF-19500/420 * Axial-leaded equivalents also available (see separate data sheet for 1N5550 thru 1N5554) APPLICATIONS / BENEFITS * Standard recovery 5 Amp rectifiers 200 to 1000 V * Military and other high-reliability applications * General rectifier applications including bridges, halfbridges, catch diodes, etc. * High forward surge current capability * Low thermal resistance * Controlled avalanche with peak reverse power capability * Inherently radiation hard as described in Microsemi MicroNote 050 MAXIMUM RATINGS * * * * * Junction Temperature: -65 C to +200 C Storage Temperature: -65oC to +175oC Thermal Resistance: 11oC/W junction to endcap Thermal Impedance: 1.5oC/W @ 10 ms heating time Average Rectified Forward Current (IO): 5 Amps @ TEC = 55C (see Note 1) * Forward Surge Current (8.3 ms half sine): 100 Amps * Solder temperatures: 260oC for 10 s (maximum) o o MECHANICAL AND PACKAGING * CASE: Hermetically sealed voidless hard glass with Tungsten slugs * TERMINALS: End caps are Copper with Tin/Lead (Sn/Pb) finish. Note: Previous inventory had solid Silver end caps with Tin/Lead (Sn/Pb) finish. * MARKING: Cathode band only * POLARITY: Cathode indicated by band * TAPE & REEL option: Standard per EIA-481-B * WEIGHT: 539 mg * See package dimensions and recommended pad layout on last page AVERAGE RECTIFIED CURRENT IO2 @ o TA=+55 C Note 2 AMPS ELECTRICAL CHARACTERISTICS TYPE MINIMUM BREAKDOWN VOLTAGE VBR @50A VOLTS WORKING PEAK REVERSE VOLTAGE VRWM VOLTS AVERAGE RECTIFIED CURRENT IO1 @ FORWARD VOLTAGE VF @ 9A (pk) MIN. VOLTS MAX. VOLTS REVERSE CURRENT IR @ VRWM A REVERSE RECOVERY trr Note 3 s 1N5550US - 1N5554US TEC=+55 C o Note 1 AMPS 1N5550US 220 200 5 3 0.6V (pk) 1.2V (pk) 1.0 2.0 1N5551US 440 400 5 3 0.6V (pk) 1.2V (pk) 1.0 2.0 1N5552US 660 600 5 3 0.6V (pk) 1.2V (pk) 1.0 2.0 1N5553US 880 800 5 3 0.6V (pk) 1.3V (pk) 1.0 2.0 1N5554US 1100 1000 5 3 0.6V (pk) 1.3V (pk) 1.0 2.0 NOTE 1: Derate linearly at 66.6 mA/C above TEC = 100C. An IO of up to 6 Amps is allowable provided that appropriate heat sinking or forced air cooling maintains the junction temperature at or below +200C. NOTE 2: Derate linearly at 25 mA/C above TA = 55C. This rating is typical for PC boards where thermal resistance from mounting point to ambient is sufficient controlled where TJ(MAX) rating is not exceeded. NOTE 3: IF = 0.5 A, IRM = 1.0 A, IR(REC) = .250 A Copyright (c) 2006 11-27-2006 REV B Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 1 1N5550US thru 1N5554US VOIDLESS HERMITICALLY SEALED SURFACE MOUNT STANDARD RECOVERY GLASS RECTIFIERS SCOTTSDALE DIVISION WWW .Microsemi .C OM Symbol VBR VRWM IO VF IR trr SYMBOLS & DEFINITIONS Definition Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current. Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating temperature range excluding all transient voltages (ref JESD282-B). Average Rectified Output Current: Output Current averaged over a full cycle with a 50 Hz or 60 Hz sine-wave input and a 180 degree conduction angle Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current. Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and temperature. Reverse Recovery Time: The time interval between the instant the current passes through zero when changing from the forward direction to the reverse direction and then a specified recovery decay point after a peak reverse current occurs. PACKAGE DIMENSIONS AND PAD LAYOUT NOTE: This Package Outline has also previously been identified as "D-5B" INCHES MIN BL BD ECT S .205 .137 .019 .003 MAX .225 .142 .028 --MIN 5.21 3.48 0.48 0.08 mm MAX 5.72 3.61 0.711 --A B C PAD LAYOUT INCHES 0.288 0.070 0.155 mm 7.32 1.78 3.94 1N5550US - 1N5554US Note: If mounting requires adhesive separate from the solder, an additional 0.080 inch diameter contact may be placed in the center between the pads as an optional spot for cement. Copyright (c) 2006 11-27-2006 REV B Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 2 |
Price & Availability of 1N5554US
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